Sains Malaysiana 42(2)(2013): 205–211

Current and Conductance Modulation at Elevated Temperature in Siliconand InAs-based

Spin Field-Effect Transistors

(Modulasi Arus dan Konduktans pada Suhu Tinggi dalam Transistor Silikon

dan InAs Berasaskan Spin Kesan Medan)

Dmitri Osintsev*, ViktorSverdlov, AlexanderMakarov & SiegfriedSelberherr

Institute for Microelectronics, TU Wien, Gusshaustr, 27-29, Wien 1040, Austria

Received: 7 January 2012 / Accepted: 21 May 2012

ABSTRACT

Spin field-effect transistors (SpinFETs) are promising candidates for future integrated microelectronic circuits. A SpinFET is composed of two ferromagnetic contacts (source and drain), which sandwich a semiconductor channel. Current modulation is achieved by electrically tuning the gate voltage dependent strength of the spin-orbit interaction in the semiconductor region. We investigated the properties of SpinFETs for various parameters - the band mismatch, the barrier height between the contacts and the channel and the strength of the spin-orbit coupling, for various temperatures. We demonstrated that the creation of Schottky barriers between the channel and the contacts guarantees a pronounced modulation of the magnetoresistance sufficient to open a possibility to operate SpinFETs at room temperature. We also demonstrated that silicon fins with [100] orientation exhibit a stronger dependence on the value of the spin-orbit interaction and are thus preferable for practical realization of silicon-based SpinFETs.

Keywords: Spin field-effect transistor; spin-orbit interaction; temperature

ABSTRAK

Transistor spin kesan medan (SpinFETs) adalah calon yang menjanjikan masa depan mikroelektronik litar bersepadu. SpinFET terdiri daripada dua sentuhan feromagnetik (punca dan salir), antara saluran semikonduktor. Modulasi arus dicapai dengan pelarasan secara elektrik kekuatan voltan get bergantung bagi interaksi orbit putaran di rantau semikonduktor. Sifat SpinFETs bagi pelbagai parameter - ketidaksepadanan jalur, ketinggian sempadan di antara sentuhan dan saluran dan kekuatan gandingan putaran orbit untuk pelbagai suhu telah dikaji. Ditunjukkan bahawa pembentukan sempadan Schottky antara saluran dan sentuhan menjamin modulasi ketara magnetorintangan yang mencukupi untuk membuka kemungkinan untuk operasi SpinFETs pada suhu bilik. Ditunjukkan juga bahawa sirip silikon dengan [100] orientasi menunjukkan pergantungan yang kuat kepada nilai interaksi putaran orbit dan dengan itu lebih baik untuk realisasi praktikal SpinFETs berasaskan silikon.

Kata kunci: Interaksi spin-orbit; suhu;  transistor spin kesan medan

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*Corresponding author; email: osintsev@iue.tuwien.ac.at