Sains Malaysiana 43(4)(2014): 617–621

Characterizations of Cupric Oxide Thin Films on Glass and Silicon Substrates by

Radio Frequency Magnetron Sputtering

(Pencirian Kuprik Oksida Filem Nipis atas Substrat Kaca dan Silikon dengan Percikan Pemagnetan Frekuensi Radio)

P.K. OOI*, C.G. CHING, M.A. AHMAD, S.S. NG, M.J. ABDULLAH,

H. ABU HASSAN & Z. HASSAN

Nano-Optoelectronics Research and Technology Laboratory, School of Physics

Universiti Sains Malaysia, 11800 Penang, Malaysia

Received: 20 February 2013/Accepted:  5 August 2013

ABSTRACT

Cupric oxide (CuO) thin films were prepared on a glass and silicon (Si) substrates by radio frequency magnetron sputtering system. The structural, optical and electrical properties of CuO films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Fourier transform infrared spectrometer, ultra-violet visible spectrophotometer, respectively, four point probe techniques and Keithley 4200 semiconductor characterization system. The XRD result showed that single phase CuO thin films with monoclinic structure were obtained. AFM showed well organized nano-pillar morphology with root mean square surface roughness for CuO thin films on glass and Si substrates were 3.64 and 1.91 nm, respectively. Infrared reflectance spectra shown a single reflection peak which is corresponding to CuO optical phonon mode and it confirmed that only existence of CuO composition on both substrates. The optical direct band gap energy of the CuO film grown on glass substrate, which is calculated from the optical transmission measurement was 1.37 eV. Finally, it was found that the deposited CuO films are resistive and the palladium formed ohmic contact for CuO on glass and schottky contact for CuO on Si.

Keywords: Cupric oxide; radio frequency magnetron sputtering; ultra-violet visible spectroscopy; X-ray diffraction

ABSTRAK

Filem nipis kuprik oksida (CuO) telah disediakan pada substrat kaca dan silikon (Si) dengan sistem percikan pemagnetan frekuensi radio. Struktur sifat optik dan elektrik filem CuO dicirikan masing-masing oleh pembelauan sinar-X (XRD), mikroskopi daya atom (AFM), transformasi Fourier inframerah spektrometer, spektrofotometer ultra-ungu tampak, teknik empat titik penduga dan Keithley 4200 sistem pencirian semikonduktor. Keputusan XRD menunjukkan bahawa fasa tunggal CuO filem nipis dengan struktur monoklinik telah diperoleh. AFM menunjukkan nano tunggak morfologi terancang dengan punca min kuasa dua yang rendah kekasaran permukaan bagi CuO filem nipis atas kaca dan Si masing-masing sebanyak 3.64 dan 1.91 nm. Spektrum pantulan inframerah menunjukkan puncak refleksi tunggal yang sepadan dengan mod fonon optik CuO dan ia mengesahkan bahawa hanya komposisi CuO wujud bagi kedua-dua substrat. Jurang langsung tenaga jalur optik filem CuO, yang dikira daripada pengukuran transmisi optik, adalah 1.37 eV. Akhirnya, didapati CuO filem adalah berintangan dan Pd membentuk sentuhan ohmik bagi CuO atas kaca dan sentuhan schottky bagi CuO atas Si.

Kata kunci: Kuprik oksida; pembelauan sinar-X; percikan pemagnetan frekuensi radio; spektrofotometer ultra-ungu tampak

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*Corresponding author; email: pkooi11@yahoo.com