Sains Malaysiana 46(7)(2017): 1069–1074

http://dx.doi.org/10.17576/jsm-2017-4607-08

 

Effect of Heating Duration on the Synthesis of Silicon Carbide Nanotubes by Microwave Heating of MWCNTs and Silica

(Kesan Tempoh Pemanasan terhadap Sintesis Tiub Nano Silikon Karbida oleh Pemanasan Gelombang Mikro MWCNTs dan Silika)

 

TONY VOO CHUNG SUNG¹, VOON CHUN HONG¹*, LEE CHANG CHUAN², SUBASH C.B. GOPINATH^1,4, LIM BEE YING³, MOHD KHAIRUDDIN MOHD ARSHAD¹, FOO KAI LOONG¹, UDA HASHIM¹, RUSLINDA A. RAHIM¹, MOHD NASHA AIN BIN NORDIN⁵

& NOR AZIZAH PARMIN¹

 

¹Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Seriab

01000 Kangar, Perlis Indera Kayangan, Malaysia

 

²School of Manufacturing Engineering, Universiti Malaysia Perlis (UniMAP),

Kampus Alam Pauh Putra, 02600 Arau, Perlis Indera Kayangan, Malaysia

 

³School of Materials Engineering, Universiti Malaysia Perlis (UniMAP), Jejawi,

02600 Arau, Perlis Indera Kayangan, Malaysia

 

⁴School of Bioprocess Engineering, Universiti Malaysia Perlis (UniMAP), 02600 Arau,

Perlis Indera Kayangan, Malaysia

 

⁵Advanced Materials Research Centre, Kulim Hi-Tech Park, 09000 Kulim, Kedah Darul Aman

Malaysia

 

Received: 23 December 2016/Accepted: 21 February 2017

 

ABSTRACT

In this article, the effect of heating duration on the synthesis of silicon carbide nanotubes (SiCNTs) was reported. SiCNTs were synthesized from blend of silicon dioxide (SiO₂) and multi-walled carbon nanotubes (MWCNTs) in the ratio of 1:3 by using the microwave heating at 1400°C and maintained at duration of 20, 40 and 60 min, respectively. SiCNTs synthesized at heating duration of 40 and 60 min showed the presence of single phase β-SiC in X-ray diffraction patterns. Meanwhile, field emission scanning electron microscope images showed that SiCNTs were formed and no residual of SiO2 and MWCNTs was observed for SiCNTs formed at heating duration of 40 and 60 min. Transmission electron microscopy images showed the SiCNTs have inter-planar spacing of 0.263 nm and tubular structure of nanotube were retained. The peak corresponded to β-SiC was observed at wavelength of 465 nm from the photoluminescence spectroscopy and associated with energy band gap of 2.67 eV. Absorption bands of Si-C bond were detected at 806.23 cm^-1 from the fourier transform infrared spectra. High purity SiCNTs was obtained at 40 and 60 min as indicated by low weight loss by thermo-gravimetric analysis. 40 min is the most suitable heating duration for the synthesis of single phase β-SiCNTs.

 

Keywords: Microwave processing; multi-walled carbon nanotube; silicon carbide nanotube; silicon dioxide; sintering

 

ABSTRAK

Dalam kertas ini, kesan jangka masa pemanasan terhadap sintesis tiub nano silikon karbida (SiCNTs) telah dilaporkan. SiCNTs telah disintesis daripada campuran silikon dioksida (SiO₂) dan tiub nano karbon berbilang dinding (MWCNTs) dalam nisbah 1:3 dengan menggunakan pemanasan gelombang mikro pada 1400°C dan dikekalkan pada jangka masa 20, 40 dan 60 min. SiCNTs yang disintesis dengan tempoh pemanasan 40 dan 60 min telah menunjukkan kehadiran β-SiC fasa tunggal dalam pola pembelauan sinar-X. Sementara itu, imej pancaran medan mikroskopi elektron pengimbasan menunjukkan bahawa SiCNTs telah terbentuk dan tiada sisa SiO₂ dan MWCNTs diperhatikan untuk SiCNTs terbentuk dengan tempoh pemanasan 40 dan 60 min. Imej mikroskopi elektron pancaran menunjukkan jarak antara satah untuk SiCNTs adalah 0.263 nm dan struktur tiub nano dikekalkan. Puncak ß-SiC diperhatikan pada jarak gelombang 465 nm dari spektroskopi fotoluminesen dan dikaitkan dengan jurang jalur tenaga sebanyak 2.67 eV. Belang penyerapan ikatan Si-C telah dikesan pada 806.23 cm^-1 dari spektroskopi transformasi fourier inframerah. Ketulenan SiCNTs yang tinggi telah diperoleh dengan tempoh pemanasan 40 dan 60 min seperti yang ditunjukkan oleh kesusutan berat yang rendah dengan analisis thermogravimetrik. 40 min adalah tempoh pemanasan yang paling sesuai untuk sintesis β-SiCNTs fasa tunggal.

 

Kata kunci: Pensinteran; proses gelombang mikro; silikon dioksida; tiub nano karbon berbilang dinding; tiub nano silikon karbida

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*Corresponding author; email: chvoon@unimap.edu.my