Sains Malaysiana 46(7)(2017): 1111–1117

http://dx.doi.org/10.17576/jsm-2017-4607-14

 

Graphene Growth at Low Temperatures using RF-Plasma Enhanced Chemical Vapour Deposition

(Pertumbuhan Grafin pada Suhu Rendah menggunakan Pemendapan Wap Kimia secara Peningkatan RF-Plasma)

 

AISHAH KHALID, MOHD AMBRI MOHAMED* & AKRAJAS ALI UMAR

 

Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia,

43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

 

Received: 26 December 2016/Accepted: 22 February 2017

 

ABSTRACT

The advantage of plasma enhanced chemical vapor deposition (PECVD) method is the ability to deposit thin films at relatively low temperature. Plasma power supports the growth process by decomposing hydrocarbon to carbon radicals which will be deposited later on metal catalyst. In this work, we have successfully synthesis graphene on Ni and Co films at relatively low temperature and optimize the synthesis conditions by adjusting the plasma power. Low temperature growth of graphene was optimized at 600°C after comparing the quality of as-grown graphene at several temperatures from 400 to 800°C and by varying plasma powers in the range of 20 - 100 W. Raman analysis of the as-grown samples showed that graphene prefers lower plasma power of 40 W. The annihilation of graphene formation at higher plasma powers is attributed to the presence of high concentration of hydrogen radical from methane which recombines with carbon elements on thin film surface. The optimum graphene growth conditions were obtained at growth temperature of 600°C, plasma power of 40 W and growth time of 10 min with methane flow rate of 120 sccm.

 

Keywords: Graphene growth; low temperature; PECVD; plasma

 

ABSTRAK

Kelebihan kaedah pemendapan wap kimia secara peningkatan plasma (PECVD) adalah keupayaan untuk endapan filem pada suhu yang rendah. Kuasa plasma menyokong proses pertumbuhan dengan menguraikan hidrokarbon kepada unsur karbon aktif dan kemudian diserap oleh logam pemangkin. Dalam kajian ini, kami telah berjaya mensintesis grafin di atas filem Ni and Co pada suhu rendah dan mengoptimumkan keadaan sintesis dengan mengubah kuasa plasma. Suhu pertumbuhan rendah diperoleh pada 600°C setelah membandingkan kualiti grafin yang terhasil pada beberapa suhu lain daripada 400 kepada 800°C dengan mengubah kuasa plasma dalam lingkungan 20-100 W. Analisis Raman menunjukkan bahawa pertumbuhan grafin memerlukan kuasa plasma yang rendah iaitu 40 W. Penghapusan pembentukan grafin pada kuasa plasma yang lebih tinggi adalah disebabkan oleh kehadiran unsur aktif hidrogen yang berkepekatan tinggi daripada metana yang bergabung dengan unsur karbon pada permukaan filem nipis. Keadaan pertumbuhan grafin yang optimum diperoleh pada suhu pertumbuhan 600°C, kuasa plasma 40 W dan masa pertumbuhan 10 min dengan kadar aliran metana 120 sccm.

 

Kata kunci: Pertumbuhan grafin; PECVD; plasma; suhu rendah

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*Corresponding author; email: ambri@ukm.edu.my