Sains Malaysiana 46(7)(2017): 1147–1154

http://dx.doi.org/10.17576/jsm-2017-4607-18

 

Fabrication and Characterization of Graphene-on-Silicon Schottky Diode for Advanced Power Electronic Design

(Fabrikasi dan Pencirian Grafin-atas-Silikon Diod Schottky untuk Rekaan Kuasa Elektronik Terkedepan)

MOHD ROFEI MAT HUSSIN¹*, MUHAMMAD MAHYIDDIN RAMLI², SHARAIFAH KAMARIAH WAN SABLI¹, ISKHANDAR MD NASIR¹, MOHD ISMAHADI SYONO¹, H.Y. WONG³ & MUKTER ZAMAN³

 

¹MIMOS Semiconductor Sdn. Bhd. (MSSB), MIMOS Bhd, Technology Park Malaysia, 57000 Kuala Lumpur, Federal Territory, Malaysia

 

²School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), 02600 Arau, Perlis Indera Kayangan, Malaysia

 

³Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor Darul Ehsan, Malaysia

 

Received: 3 January 2017/Accepted: 6 March 2017

 

ABSTRACT

In this study, graphene-on-silicon process technology was developed to fabricate a power rectifier Schottky diode for efficiency improvement in high operating temperature. Trench-MOS-Barrier-Schottky (TMBS) diode structure was used to enhance the device performance. The main objective of this research was to study the effect of reduced graphene oxide (RGO) deposited on silicon surface for Schottky barrier formation and heat transfer in Schottky junction. The study showed RGO deposited on silicon as a heat spreader could help to reduce the effect of heat generated in the Schottky junction that leads to a leakage current reduction and efficiency improvement in the device. With comparison to the conventional metal silicide (titanium silicide and cobalt silicide), the leakage reduced by two-orders of magnitude when tested under high operating temperature (>100°C). TMBS rectifier diode that uses graphene-based heat spreader could produce highly reliable product able to withstand high temperature operating condition.

 

Keywords: Graphene-on-silicon; heat spreader; power rectifier; Schottky diode

 

ABSTRAK

Dalam kajian ini, teknologi proses grafin-atas-silikon telah dibangunkan untuk memfabrikasi diod penerus kuasa Schottky bagi meningkatkan kecekapannya pada suhu operasi yang tinggi. Struktur diod Parit-MOS-Halangan-Schottky (TMBS) telah digunakan untuk meningkatkan prestasi peranti. Objektif utama kajian ini adalah untuk mengkaji kesan grafin oksida dikurangkan (RGO) yang dimendapkan pada permukaan silikon untuk pembentukan halangan Schottky dan pemindahan haba dalam persimpangan Schottky. Kajian ini menunjukkan RGO yang dimendapkan di permukaan silikon sebagai penyebar haba boleh membantu untuk mengurangkan kesan haba yang terjana dalam persimpangan Schottky yang membawa kepada pengurangan arus bocor dan peningkatan kecekapan peranti. Secara perbandingan dengan logam silisida konvensional (titanium silisida dan kobalt silisida), kebocoran arus elektrik telah berkurang sebanyak dua magnitud lebih rendah apabila diuji di bawah suhu operasi yang tinggi (>100°C). Diod penerus TMBS yang menggunakan penyebar haba berasaskan grafin berkemungkinan boleh menghasilkan produk yang sangat stabil dalam keadaan operasi suhu yang tinggi.

 

Kata kunci: Diod Schottky; grafin-atas-silikon; penerus kuasa; penyebar haba

 

 

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*Corresponding author; email: rofei@mimos.my