Sains Malaysiana 48(6)(2019): 1157–1161

http://dx.doi.org/10.17576/jsm-2019-4806-01

 

Silicon Nanohole Arrays Fabricated by Electron Beam Lithography and Reactive Ion Etching

(Fabrikasi Lubang Nano Silikon Oleh Litografi Alur Elektron dan Punaran Ion Reaktif)

 

LITA RAHMASARI^1,2, MOHD FAIZOL ABDULLAH¹, AHMAD RIFQI MD ZAIN^3,4 & ABDUL

MANAF HASHIM¹*

 

¹Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Sultan Yahya Petra, 54100 Kuala Lumpur, Federal Territory, Malaysia

 

²Faculty of Teacher Training and Education, Sebelas Maret University, Surakarta, Indonesia

 

³Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 46300 UKM Bangi, Selangor Darul Ehsan, Malaysia

 

⁴Harvard John A Paulson, School of Engineering and Applied Science, Harvard University, Cambridge, MA, United States of America

 

Received: 16 July 2018/Accepted: 15 November 2018

 

ABSTRACT

The fabrication of silicon nanohole (SiNH) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE) processes is reported. The optimum exposure dose of EBL process was found to be in the range of 210-240 μC/cm2 due to small enlargement of hole diameter after pattern development process. The anisotropic etching and isotropic etching was achieved at low and high reaction pressures, respectively. As expected, the etching rate increase with time and RF power. A relatively smooth and well-defined NH has been obtained at RF power of 100 W and reaction pressure of 0.08 Torr, which is suitable to be applied for optical waveguide.

 

Keywords: Electron beam lithography; reactive ion etching; silicon nanohole

 

ABSTRAK

Fabrikasi lubang nano silikon (SiNH) menggunakan gabungan proses litografi alur elektron (EBL) dan punaran ion reaktif (RIE) dilaporkan. Dos pendedahan proses EBL yang optimum telah dijumpai dalam julat 210-240 μC/cm2 kerana pembesaran diameter lubang yang kecil selepas proses pembangunan corak. Punaran anisotropik dan punaran isotropik masing-masing telah diperoleh pada tekanan reaksi yang rendah dan yang tinggi. Seperti yang dijangkakan, kadar punaran meningkat dengan masa dan kuasa RF. NH yang secara relatifnya licin dan bagus takrifannya telah diperoleh pada kuasa RF 100 W dan tekanan reaksi 0.08 Torr, sesuai untuk diaplikasi untuk pandu gelombang optik.

 

Kata kunci: Litografi alur elektron; lubang nano silikon; punaran ion reaktif

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*Corresponding author; email: abdmanaf@utm.my