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Sains Malaysiana 38(5)(2009): 679–683
Kesan Pengedopan Rendah ke atas Bahan Nanostruktur ZnO:Al
sebagai Lapisan Anti-Pantulan
(Low-Doping
Effect on Nanostructured ZnO:Al as Anti-Reflecting Coating)
Huda Abdullah*, Nor Habibi Saadah & Nugroho Ariyanto
Fakulti Kejuruteraan dan Alam Bina
Universiti Kebangsaan Malaysia
43600 UKM Bangi, Selangor, D.E., Malaysia
Muhamad Mat Salleh
Institut Kejuruteraan Mikro dan Nanoelektronik (IMEN)
Universiti Kebangsaan Malaysia
43600 UKM Bangi, Selangor, D.E., Malaysia
Diserahkan: 8 Oktober 2008 / Diterima:
27 Februari 2009
ABSTRAK
Kesan gantian Al berkepekatan rendah pada tapak-Zn sebagai lapisan anti-pantulan (LAP) untuk bahan Zn1-xAlxO ke atas pencirian struktur, morfologi dan sifat optik telah dikaji. Sampel Zn1-xAlxO dengan x = 0.00, 0.05, 0.10 and 0.15 telah disintesis dengan menggunakan kaedah sol-gel. Filem yang diperolehi dengan kaedah sol-gel telah disepuh lindap pada 400¡C selama 2 jam. Kaedah pembelauan sinar-X (XRD) dan Mikroskop Elektron Imbasan (SEM) digunakan untuk mencirikan struktur dan morfologi filem. Spektrum XRD menunjukkan semua sampel mempunyai struktur heksagonal. Saiz partikel menurun apabila kepekatan Al meningkat. Filem ini mempunyai struktur filem yang padat dan tebal serta berkesan untuk memerangkap cahaya dalam filem nipis sel suria. Sifat optik telah dicirikan dengan menggunakan spektrometer UV-Vis-NIR dan fotoluminesen. Peningkatan nilai jurang tenaga penting sebagai unsur lapisan anti pantulan. Oleh itu, filem ini boleh digunakan sebagai lapisan anti-pantulan untuk sel solar.
Kata kunci: Lapisan anti-pantulan; struktur nano; ZnO
ABSTRACT
The effects
of substituting low concentration Al at Zn-site as an anti-reflecting coating (ARC) for Zn1-xAlxO compound on structural, morphological and optical properties
have been studied. Zn1-xAlxO sample with x = 0.00, 0.05, 0.10 and 0.15 were synthesized via
a sol gel method. The films obtained from the sol gel have been annealed at
400¡C for 2 hours. X-ray diffraction Method (XIR) and Scanning Electron Microscope (SEM) have been used for structural characterization and morphology of
the film. XRD spectra show all samples
exhibit hexagonal structure. The particle size decreases with increasing Al
concentration. These films exhibit a dense and compact film structure that
could be effective for light trapping in thin film solar cells. The optical
property has been characterised using UV-Visible-NIR and
photoluminescence spectrometer. The band gaps increase as the concentration of
Al increases. The increase of the band gap is an important requirement for good
anti-reflecting coating element. Therefore these films can be applied as
anti-reflecting coating thin film for solar cells.
Keywords:
Anti-reflecting coating; Nanostructure; ZnO
RUJUKAN
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*Pengarang untuk surat-menyurat; email: melancholia143@yahoo.com
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