Sains Malaysiana 43(7)(2014): 1077–1082
Fabrication
of Porous ZnO Thin Films via Ammonium Hydroxide:
Effects
of Etching Time and Oxidizer on Surface Morphology and Surface Roughness
(Fabrikasi Filem Nipis ZnO Berliang melalui Ammonium Hidroksida: Kesan Masa Punaran dan Pengoksida
ke
atas Morfologi dan
Kekasaran Permukaan)
S.S. NG*, P.K. OOI, S. YAAKOB, M.J. ABDULLAH, H. ABU HASSAN
& Z. HASSAN
Nano-Optoelectronics
Research and Technology Laboratory, School of Physics,
Universiti Sains Malaysia, 11800, Penang, Malaysia
Diserahkan: 28 Mac 2013/Diterima: 27 Disember 2013
ABSTRACT
The effects of the etching time and
oxidizer on the surface morphology and surface roughness of
the porous zinc oxide (ZnO) thin films,
which were formed using ammonium hydroxide (NH4OH)
were investigated. The etching time was varied from 1 to 5 min.
The oxidizer used was hydrogen peroxide (H2O2) solution. The ZnO thin films were obtained using radio- frequency magnetron
sputtering on n-type silicon (111) substrate. The thickness of the
ZnO thin films was approximately 1.34 μm.
The morphology, topography and surface roughness of the porous ZnO were characterized using scanning electron microscope
(SEM) and atomic force microscope.
The SEM results showed that the
surface morphology of the as-grown ZnO
film has a leaf-like structure. However, this structure transformed
into irregularly shaped pores upon exposure of the ZnO
thin films to the etchant solutions. Increased etching time corresponded
to increased pore size, which concurrently resulted in the formation
of granular ZnO. Finally, it was found that the etching rate increases
with the addition of H2O2
in the NH4OH
solution.
Keywords: Ammonium hydroxide;
hydrogen peroxide; porous ZnO; wet etching
ABSTRAK
Kesan masa punaran dan
pengoksida ke
atas morfologi dan
kekasaran permukaan
filem nipis zink oksida
(ZnO) berliang
yang dihasilkan dengan amonium hidroksida (NH4OH) telah
dikaji. Masa punaran diubah daripada 1 ke 5 min. Pengoksida adalah larutan hidrogen peroksida (H2O2). Filem nipis ZnO
disediakan dengan
menggunakan percikan pemagnetan frekuensi radio atas substrat silikon (111)
jenis-n. Ketebalan
filem nipis ZnO
adalah lebih
kurang 1.34 μm.
Morfologi,
topografi dan kekasaran
permukaan ZnO
berliang dicirikan dengan menggunakan mikroskop elektron imbasan (SEM)
dan mikroskop
daya atom. Keputusan SEM menunjukkan
bahawa ZnO
filem yang disediakan terdiri daripada lapisan struktur seperti dedaun. Walau bagaimanapun, struktur ini bertukar
kepada bentuk
liang yang tidak
teratur apabila
filem nipis ZnO
terdedah kepada
larutan pemunar. Peningkatan masa punaran sejajar dengan peningkatan saiz liang, yang serentak
mengakibatkan pembentukan
ZnO berbutir. Akhirnya,
didapati bahawa
kadar punaran
meningkat dengan
penambahan H2O2
dalam larutan
NH4OH.
Kata kunci: Amonium hidroksida; hidrogen peroksida; punaran basah; ZnO berliang
RUJUKAN
Chang, E.Y., Lai, Y.L., Lee, Y.S. & Chen, S.H. 2001. A GaAs/ AlAs wet selective etch
process for the gate recess of GaAs power
metal-semiconductor field-effect transistors. Journal of the Electrochemical
Society 148: G4-G9.
Chang, S.C.,
Hicks, D.B. & Laugal, R.C.O. 1992. Patterning of
zinc oxide thin films. Proceedings of the 5th IEEE Solid-State Sensor and
Actuator Workshop 5: 41-45.
Gür, E., Kiliç, B., Coşkun, C., Tüzemen, S.
& Bayrakçeken, F. 2010. Nanoporous structures on ZnO thin films. Superlattices and Microstructures 47: 182-186.
Jo, W., Kim, S.J. & Kim,
D.Y. 2005. Analysis of the etching behavior of ZnO ceramics. Acta Materialia53: 4185-4188.
Kim,
S.H., Kim, H.K. & Seong, T.Y. 2005. Effect
of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n-type ZnO. Applied Physics
Letters 86: 1-3.
Lee,
J.M., Chang, K.M., Kim, K.K., Choi, W.K. & Park, S.J. 2001. Dry etching of ZnO using an inductively coupled
plasma. Journal of the Electrochemical Society 148: G1-G3.
Look, D.C. 2001. Recent
advances in ZnO materials and devices. Materials
Science and Engineering B: Solid-State Materials for Advanced Technology 80:
383-387.
Lu,
Y.M., Hwang, W.S., Liu, W.Y. & Yang, J.S. 2001. Effect
of RF power on optical and electrical properties of ZnO thin film by magnetron sputtering. Materials Chemistry and Physics 72:
269-272.
Na,
S.W., Shin, M.H., Chung, Y.M., Han, J.G. & Lee, N.E. 2005. Investigation of
process window during dry etching of ZnO thin films
by CH4-H2-Ar
inductively coupled plasma. Journal of Vacuum Science and Technology A:
Vacuum, Surfaces and Films 23: 898-904.
Sun, J., Bian, J., Liang, H., Zhao, J., Hu, L., Zhao, Z., Liu, W.
& Du, G. 2007. Realization of controllable etching for ZnO film by NH4Cl
aqueous solution and its influence on optical and electrical properties. Applied Surface Science 253: 5161-5165.
Tsai, C.H., Hung,C.I.,Yang, C.F. & Houng, M.P. 2010. Hydrogen peroxide
treatment on ZnO substrates to investigate the
characteristics of Pt and Pt oxide Schottky contacts. Applied Surface Science 257: 610-615.
Yoo, D.G., Nam, S.H., Kim,
M.H., Jeong, S.H., Jee,
H.G., Lee, H.J., Lee, N.E., Hong, B.Y., Kim, Y.J., Jung, D. & Boo, J.H.
2008. Fabrication of the ZnO thin films using
wet-chemical etching processes on application for organic light emitting diode
(OLED) devices. Surface and Coatings Technology 202: 5476-5479.
Zhao,
L., Liu, C., Teng, X., Sun, S., Zhang, W., Zhu, J.,
Feng, Y. & Guo, B. 2006. The
surface topography of GaN grown on Si (1 1 1)
substrate before and after wet chemical etching. Materials Science in
Semiconductor Processing 9: 403-406.
*Pengarang untuk surat-menyurat; email: shashiong@yahoo.com
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