Sains Malaysiana 51(5)(2022): 1567-1576

http://doi.org/10.17576/jsm-2022-5105-24

Carrier Density and Thickness Optimization of In_xGa_1-xN Layer by Scaps-1D Simulation for High Efficiency III-V Solar Cell

(Pengoptimuman Ketumpatan Pembawa dan Ketebalan Lapisan In_xGa_1-xN dengan menggunakan Simulasi Scaps-1D untuk Kecekapan Tinggi Sel Suria III-V)

HABIB ULLAH MANZOOR^1,2, TAN AIK KWAN¹, NG SHA SHIONG^1,* & ZAINURIAH HASSAN¹

¹Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 USM, Penang, Malaysia

²University of Engineering and Technology, Lahore-FSD Campus, Pakistan

Diserahkan: 15 Julai 2021/Diterima: 29 September 2021

Abstract

In this study, the indium gallium nitride (In_xGa_1-xN) p-n junction solar cells were optimized to achieve the highest conversion efficiency. The In_xGa_1-xN p-n junction solar cells with the whole indium mole fraction (0 £ x £ 1) were simulated using SCAPS-1D software. Optimization of the p- and n-In_xGa_1-xN layer's thickness and carrier density were also carried out. The thickness and carrier density of each layer was varied from 0.01 to 1.50 µm and 10¹⁵ to 10²⁰ cm^-3. The simulation results showed that the highest conversion efficiency of 23.11% was achieved with x = 0.6. The thickness (carrier density) of the p- and n-layers for this In_0.6Ga_0.4N p-n junction solar cell are 0.01 (10²⁰) and 1.50 μm (10¹⁹ cm^-3), respectively. Simulation results also showed that the conversion efficiency is more sensitive to the variations of layer's thickness and carrier density of the top p-In_xGa_1-xN layer than the bottom n-In_xGa_1-xN layer. Besides that, the results also demonstrated that thinner p-In_xGa_1-xN layer with higher carrier density offers better conversion efficiency.

Keywords: Photovoltaics; semiconducting indium compounds; solar energy; thin films solar cell; III-V nitride

Abstrak

Dalam kajian ini, sel suria indium galium nitrida (In_xGa_1-xN) bersimpang p-n telah dioptimumkan untuk mencapai kecekapan penukaran yang tertinggi. Sel suria In_xGa_1-xN bersimpang p-n dengan keseluruhan pecahan mole indium (0 ≤ x ≤ 1) telah disimulasi dengan menggunakan perisian SCAPS-1D. Pengoptimuman untuk ketebalan dan ketumpatan pembawabagi lapisan p- dan n-InGaN juga telah dijalankan. Ketebalan dan ketumpatan pembawa bagi setiap lapisan telah diubah daripada 0.01 hingga 1.50 µm dan 10¹⁵ hingga 10²⁰ cm^-3. Keputusan simulasi menunjukkan bahawa kecekapan penukaran tertinggi sebanyak 23.11% telah dicapai dengan x = 0.6. Ketebalan (ketumpatan pembawa) bagi lapisan p- dan n- untuk sel suria In_0.6Ga_0.4N adalah 0.01 (10²⁰) dan 1.50 µm (10¹⁹ cm^-3), masing-masing. Keputusan simulasi juga menunjukkan bahawa kecekapan penukaran adalah lebih sensitif terhadap perubahan ketebalan dan ketumpatan pembawa bagi lapisan p-In_xGa_1-xN atas berbanding dengan lapisan n-In_xGa_1-xN bawah. Selain itu, keputusan simulasi juga menunjukkan bahawa lapisan p-In_xGa_1-xN yang lebih nipis bersama dengan ketumpatan pembawa yang lebih tinggi memberi kecekapan penukaran yang lebih tinggi.

Kata kunci: Fotovolta; sebatian semikonduktor indium; sel suria filem nipis; tenaga suria; III-V nitride

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^*Pengarang untuk surat-menyurat; email: shashiong@yahoo.com