 |
 |
 |
 |
 |
 |
Sains Malaysiana 42(2)(2013):
183–186
Si
Nanowires Produced by Very High Frequency Plasma Enhanced Chemical
Vapor
Deposition (PECVD) via VLS Mechanism
(Kajian Dawai Nano Silikon (SiNW) Dihasilkan dengan Pemendapan Wap Kimia
Peneguh Plasma (PECVD) dengan Kaedah VLS)
Yussof Wahab1,2, Habib Hamidinezhad1,3* & Zulkafli Othaman1
1Ibnu Sina Institute for Fundamental Science Studies (IIS), Universiti Teknologi Malaysia
81310 Skudai, Johor, Malaysia
2UTM Razak School of Engineering and Advanced Technology, UTM International Campus
Jalan Semarak, 54100 Kuala Lumpur, Malaysia
3Department of
Physics, Faculty of Basic Sciences, University of Mazandaran
Pasdaran Street, Babolsar, 47415 Mazandaran,
Iran
Received:
7 January 2012 / Accepted: 21 May 2012
ABSTRACT
Silicon nanowires (SiNWs) with diameter
of about a few nanometers and length of 3 μm on
silicon wafers were synthesized by very high frequency plasma enhanced chemical
vapor deposition. Scanning electron microscopy (SEM)
observations showed that the silicon nanowires were grown randomly and
energy-dispersive X-ray spectroscopy analysis indicates that the nanowires have
the composition of Si, Au and O elements. The SiNWs were characterized by high resolution transmission
electron microscopy (HRTEM) and Raman spectroscopy. SEM micrographs
displayed SiNWs that are needle-like with a diameter
ranged from 30 nm at the top to 100 nm at the bottom of the wire and have
length a few of micrometers. In addition, HRTEM showed
that SiNWs consist of crystalline silicon core and
amorphous silica layer.
Keywords: PECVD; silicon nanowire; VLS
ABSTRAK
Nanodawai silikon (SiNW) dengan diameter beberapa nanometer dan panjang 3 μm di atas wafer silikon telah dihasilkan dengan menggunakan pemendapan wap kimia peneguh plasma. Pemerhatian mikroskop elektron imbasan (SEM) menunjukkan nanodawai tumbuh secara rawak dan analisis spektrokopi serakan sinar-X menunjukkan nanodawai mengandungi unsur Si, Au dan O. Nanodawai silikon diukur menggunakan mikroskop transmisi elektron resolusi tinggi (HRTEM) dan spektroskopi Raman. SEM menunjukkan bahawa SiNW adalah seperti jarum dengan diameter berjulat 30 nm di puncak hingga 100 nm di dasar dawai dan mempunyai panjang dalam beberapa mikrometer. Tambahan lagi, HRTEM membuktikan bahawa SiNW mengandungi teras hablur silikon dan lapisan silika amorfus.
Kata kunci: Nanodawai silikon; PECVD; VLS
REFERENCES
Fan, X.H., Xu, L., Li, C.P., Zheng, Y.F., Lee, C.S. & Lee, S.T. 2001. Effects of ambient pressure on silicon nanowire growth. Chem.
Phys. Lett. 334: 229-232.
Griffiths,
H., Xu, C., Barrass, T.,
Cooke, M., Iacopi, F., Vereecken,
P. & Esconjauregui, S. 2007. Plasma assisted
growth of nanotubes and nanowires. Surf. & Coat. Technol. 201: 9215-9220.
Hamidinezhad, H., Wahab,
Y., Othaman, Z. & Ismail, A.K. 2011. Influence of growth time on morphology and structural properties of
silicon nanowires grown by VHF-PECVD. J. of Cryst. Growth 332: 7-11.
Hamidinezhad’, H., Wahab, Y. & Othaman, Z. 2011. Ultra-sharp pointed
tip Si nanowires produced by very high frequency plasma enhanced chemical vapor
deposition via VLS mechanism. J. Mater. Sci. 46: 5085-5089.
Hamidinezhad”, H., Wahab, Y., Othaman, Z. & Ismail, A.K. 2011. Au-catalyzed silicon nanoneedles synthesized from
pure silane sas at various
RF powers on silicon substrate by VHF-PECVD. Plasmonics 6:
791-796.
Hofmann,
S., Ducati, C., Neill, R.J., Piscanec, S., Ferrari,
A.C., Geng, J., Dunin- Borkowski, R.E. & Robertson, J. 2003. Gold catalyzed
growth of silicon nanowires by plasma enhanced chemical vapor deposition. Journal
of Appl. Phys. 94(9): 6005-6012.
Jasinski, J.M. & Gates, S.M. 1991. Silicon
chemical vapor deposition one step at a time: Fundamental studies of silicon
hydride chemistry. Acc. of Chem. Res. 24(1): 9-15.
Jeon, M. & Kamisako,
K. 2008. Synthesis of silicon nanowires after hydrogen
radical treatment. Mater. Lett. 62: 3903-3905.
Jeon, M. & Kamisako,
K. 2009. Synthesis of Au-catalyzed silicon nanowires by
hydrogen radical-assisted deposition method. Met. Mater. Int. 15(1):
83-87.
Kanemitsu, Y., Uto, H., Masurnoto,
Y., Matsumoto, T., Futagi, T. & Mimura, H. 1993. Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si
nanometer-sized crystallites. Phys. Rev. B. 48(4): 2827-2830.
Morales, A.M. & Lieber, C.M.
1998. Alaser ablation method for the synthesis of crystalline semiconductor
nanowires. Science 279: 208-211.
Niu, J., Sha, J.
& Yang, D. 2004. Silicon nanowires fabricated by thermal evaporation of
silicon monoxide. Physica E. 23(1-2):
131-134.
Pei, L.Z., Tang, Y.H., Chen, Y.W., Guo,
C., Zhang, W. & Zhang, Y. 2006. Silicon nanowires
grown from silicon monoxide under hydrothermal conditions. Journal of
Crystal Growth 289: 423-427.
Rosaz, G., Salem, B., Pauc, N.,
Gentile, P., Potié, A. & Baron, T. 2011. Electrical characteristics of a vertically integrated field-effect transistor
using non-intentionally doped Si nanowires. Microelectronic Engineering 88:
3312-3315.
Wagner,
R.S. & Ellis, W.C. 1964. Vapor-liquid-solid mechanism of
single crystal growth. Appl. Phys. Lett. 4(5):
89-90.
Wang,
N., Tang, Y.H., Zhang, Y.F., Lee, & Lee, S.T. 1998. Nucleation
and growth of Si nanowires from silicon oxide. Phys. Rev. B. 58:
16024-16026.
Wu,
Y., Fan, R. & Yang, P. 2002. Block-by-block growth of
single-crystalline Si/SiGe superlattice nanowires. Nano. Lett. 2(2): 83-86.
Zhang,
Y.F., Tang, Y.H., Wang, N., Yu, D.P., Lee, C.S., Bello, I. & Lee, S.T. 1998. Silicon nanowires prepared by laser ablation at
high temperature. Appl. Phys. Lett. 72(15):
1835-1837.
*Corresponding author; email: habib_hamidinezhad@yahoo.com
|
|||
|
