Sains Malaysiana 43(2)(2014): 247–252

Design and Optimization of Coupled Microring Resonators (MRRs) in Silicon-on-Insulator

(Reka Bentuk dan Pengoptimuman Penyalun Mikrogegelang Terganding di dalam Silikon-di atas-Penebat)

BUDI MULYANTI¹, P. SUSTHITHA MENON²*, SAHBUDIN SHAARI², T. HARIYADI¹, L. HASANAH³, HAZURA HAROON², ABANG ANNUAR EHSAN², D. MAHMUDIN⁴, G. WIRANTO⁴& B.Y. MAJLIS²

¹Department of Electrical Engineering Education

Indonesia University of Education (UPI), Jalan Dr. Setiabudhi 207, Bandung 40154

Indonesia

²Abang Annuar Ehsan & B.Y. Majlis

Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM) 43600 UKM Bangi, Selangor, Malaysia

³Department of Physics Education

Faculty of Mathematics and Natural Sciences Education, Indonesia University of Education (UPI)

Jalan Dr. Setiabudhi 207, Bandung 40154, Indonesia

⁴Research Centre for Electronics and Telecommunication, Indonesian Institute of Sciences (LIPI)

Jl. Sangkuriang Bandung 40135, Indonesia

Received: 5 February 2013/Accepted: 30 July 2013

ABSTRACT

The design of microring resonators (MRRs) for serial configuration, integrated in the lateral scheme was presented and simulated using 3D electromagnetic simulator based on finite integration technique. The device model is embedded on the high index contrast (HIC) structure of silicon-on-insulator with monomodal cavity for TE-mode polarizations. From the proposed model, we varied the MRRs order, waveguides separation distance and ring radius, in order to evaluate the influence of those parameters on the device performance in terms of loss, free spectral range (FSR) and quality factor (Q-factor). Upon varying the gap distances, it was found that the highest Q-factor value of the proposed design was 1275 obtained at gap separation of 150 nm for ring radius of 6 μm, while the largest FSR was 24 nm. The trade-offs between device compactness, optical bandwidth and Q- factor are also presented.

Keywords: 3D electromagnetic simulator; microring resonators; silicon-on-insulator

ABSTRAK

Kami melaporkan reka bentuk penyalun mikrogegelang (MRR) bagi konfigurasi sesiri dan diintegrasikan secara susunan sisi menggunakan simulasi elektromagnetik 3D berpandukan teknik integrasi terhingga. Model peranti terbenam di atas struktur silicon di atas penebat dengan perbezaan indeks yang tinggi (HIC) dan polarisasi mod TE tunggal. Daripada model yang dicadangkan, kami mevariasikan tertib MRR, jarak pemisahan pandu gelombang dan jejari gegelang bagi mengkaji kesan parameter tersebut terhadap prestasi peranti khususnya kehilangan, julat spektrum bebas (FSR) dan faktor kualiti (faktor-Q). Dengan mengubah jarak jurang, didapati nilai faktor-Q tertinggi adalah 1275 pada jarak pemisahan 150 nm dan jejari 6 μm, manakala FSR tertinggi adalah 24 nm. Timbal–balik antara saiz peranti, lebar jalur optik dan faktor-Q juga dinyatakan.

Kata kunci: Penyalun mikrogegelang; silikon-di atas-penebat; simulasi elektromagnetik 3D

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*Corresponding author; email: susi@eng.ukm.my