Sains Malaysiana 46(7)(2017): 1141–1145

http://dx.doi.org/10.17576/jsm-2017-4607-17

 

Pencirian Transistor Karbon Tiub Nano Berdinding Tunggal yang Dihasilkan melalui Kaedah Pertumbuhan Langsung

(Characterization of Single-Walled Carbon Nanotube Transistors by Direct Growth Method)

 

MOHD AMBRI MOHAMED*, FARAH DZILHANI ZULKEFLI & BURHANUDDIN

YEOP MAJLIS

 

Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia,

43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

 

Received: 1 January 2017/Accepted: 6 February 2017

 

ABSTRAK

Transistor berasaskan karbon tiub nano (CNTFET) telah dihasilkan melalui kaedah pertumbuhan langsung menggunakan alkohol pemangkin pemendapan wap kimia. Sifat struktur dan ciri elektrik peranti telah dikaji. FET ini menunjukkan operasi ambikutub dan ia selaras dengan jenis-Schottky FET. Ia telah didapati bahawa ketinggian halangan Schottky yang wujud antara sentuhan elektrod dan CNT, boleh termodulat oleh aplikasi berkesan daripada voltan pincang (VDS) dan voltan get (VGS). Aplikasi voltan pincang sahaja tidak mudah untuk merendahkan ketinggian halangan Schottky dan ketebalan halangan Shottky, tetapi ia berkait rapat dengan aplikasi voltan get. Bagi konfigurasi peranti dalam kajian ini, keberkesanan medan boleh dikaitkan dengan VGS:VDS = 10:-1. Peningkatan arus didapati disebabkan oleh pengurangan tenaga pengaktifan. Kaitan yang jelas antara kesan voltan pincang, voltan get dan tenaga pengaktifan telah diperhati dalam kajian ini.

 

Kata kunci: Alkohol pemangkin pemendapan wap kimia (ACCVD); kaedah pertumbuhan langsung; karbon tiub nano berdinding tunggal; keberkesanan-medan voltan pincang dan get; tenaga pengaktifan

 

ABSTRACT

Carbon nanotube field-effect transistor (CNTFET) was fabricated by means of direct growth method using alcohol catalytic chemical vapor deposition. The structural properties and characteristics of devices have been investigated. The FET shows ambipolar operation which is consistent with Schottky-type FET. It was found that carrier injection barrier heights that exist at the contacts of metal and CNT, can be modulated by application of effective bias and gate voltages. The application of bias voltage does not simply reduce the carrier injection barrier, but is correlated with the application of gate voltage. For the device configuration in this study, the field-effectiveness can be related as VGS:VDS = 10:-1. The enhancement of current can be attributed to the reduction of activation energy. The clear correlation between the effects of bias voltage, gate voltage and activation energy has been observed in this study.

 

Keywords: Activation energy; alcohol catalytic chemical vapor deposition (ACCVD); direct growth; effectiveness of bias and gate voltages; single-walled carbon nanotubes

 

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*Corresponding author; email: ambri@ukm.edu.my