Sains Malaysiana 48(6)(2019): 1195–1199

http://dx.doi.org/10.17576/jsm-2019-4806-06

Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2O3)

(Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2O3))

SITI KUDNIE SAHARI¹*, NIK AMNI FATHI NIK ZAINI FATHI¹, AZRUL AZLAN HAMZAH², NORSUZAILINA MOHAMED SUTAN¹, ZAIDI EMBONG³, SUHANA MOHAMED SULTAN⁴, MUHAMMAD KASHIF¹, MARINI SAWAWI¹, LILIK HASANAH⁵, ROHANA SAPAWI¹, KURYATI KIPLI¹, ABDUL RAHMAN KRAM¹ & NAZREEN JUNAIDI¹

¹Faculty of Engineering, Universiti Malaysia Sarawak, 94300 Kota Samarahan, Sarawak, Malaysia

²Institute of MicroEngineering and Nanotechnology, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

³Faculty of Science, Technology and Human Development, Universiti Tun Hussein Onn Malaysia, 86400 Parit Raja, Batu Pahat, Johor Darul Takzim, Malaysia

⁴Department of Electronic and Computer Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru, Johor Darul Takzim, Malaysia

⁵Universitas Pendidikan Indonesia, Jl. Dr. Setiabudhi No 229, Bandung, Indonesia

Received: 14 August 2018/Accepted: 26 November 2018

ABSTRACT

The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work, the effects of post deposition anneal (PDA) temperature between 400°C and 600°C on the chemical composition of interfacial layer between Ge and Al2O3 were examined by X-ray photoelectron spectroscopy (XPS). Investigation on thermal stability and structural characteristics for gate structure of Al2O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (XPS) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2O3 interface at higher temperature of 600°C.

Keywords: Al2O3; germanium; interfacial layer; post deposition anneal

ABSTRAK

Pemahaman tentang struktur ikatan kimia yang tinggi dielektrik/antara muka Germania (Ge) adalah sangat penting untuk membentuk antara muka dielektrik/Ge berkualiti baik dalam fabrikasi Ge kesan medan transistor logam oksida semikonduktor (MOSFETs). Di samping itu, masih belum ada penjelasan terperinci mengenai pertumbuhan antara dielektrik/Ge di bawah pengaruh suhu yang berlainan bagi pemanasan pasca sepuh lindap. Penyelidikan kesan suhu pemendapan pasca sepuh lindap (PDA) antara 400°C dan 600°C pada komposisi kimia lapisan antara antara Ge dan Al2O3 diperiksa oleh spektroskopi fotoelektron x-ray (XPS). Dalam makalah ini, kami mengkaji kestabilan terma dan pencirian struktur untuk struktur gerbang Al2O3 dielektrik yang ditanam di Ge oleh percikan RF oleh spektroskopi fotoelektron x-ray (XPS). Difahamkan bahawa rantau kekurangan oksigen dalam lapisan antara muka (IL) ditingkatkan daripada Al2O3 sepenuhnya teroksida dengan suhu PDA yang meningkat. Fenomena yang tidak diingini ini menyebabkan pengecutan IL pada antara muka Ge/Al2O3 pada suhu lebih tinggi 600°C.

Kata kunci: Al2O3; Ge; lapisan antara muka; pos pemendapan rawatan haba

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*Corresponding author; email: sskudnie@unimas.my